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Buy Kingston 8gb (1rx8gb) Ddr4 Sodimm 2666mhz Cl19 1.2v Unbuffered Valueram Notebook Laptop Memory

Kingston 8gb (1rx8gb) Ddr4 Sodimm 2666mhz Cl19 1.2v Unbuffered Valueram Notebook Laptop Memory

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Kingston 8GB (1Rx8GB) DDR4 SODIMM 2666MHz CL19 1.2V Unbuffered ValueRAM Notebook Laptop Memory This document describes ValueRAM\'s KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Selectable BC4 or BL8 on-the-fly (OTF) • Fly-by topology • Terminated control command and address bus • PCB: Height 1.18\' (30.00mm) • RoHS Compliant and Halogen-Free
48 48 AUD 100
SKU
KVR26S19S6/8
SKU#: KVR26S19S6/8 / ITEM NO: 754383 / BRAND: Kingston
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$48.00
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Kingston 8GB (1Rx8GB) DDR4 SODIMM 2666MHz CL19 1.2V Unbuffered ValueRAM Notebook Laptop Memory This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Selectable BC4 or BL8 on-the-fly (OTF) • Fly-by topology • Terminated control command and address bus • PCB: Height 1.18' (30.00mm) • RoHS Compliant and Halogen-Free

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Please refer to Manufacturer SKU for the exact details

Kingston 8GB (1Rx8GB) DDR4 SODIMM 2666MHz CL19 1.2V Unbuffered ValueRAM Notebook Laptop Memory This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Selectable BC4 or BL8 on-the-fly (OTF) • Fly-by topology • Terminated control command and address bus • PCB: Height 1.18' (30.00mm) • RoHS Compliant and Halogen-Free
Kingston 8GB (1Rx8GB) DDR4 SODIMM 2666MHz CL19 1.2V Unbuffered ValueRAM Notebook Laptop Memory This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Selectable BC4 or BL8 on-the-fly (OTF) • Fly-by topology • Terminated control command and address bus • PCB: Height 1.18' (30.00mm) • RoHS Compliant and Halogen-Free

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